DocumentCode
711566
Title
A 6.5mW, wide band dual-path LC VCO design with mode switching technique in 130nm CMOS
Author
Jun Li ; Ni Xu ; Yuanfeng Sun ; Rhee, Woogeun ; Zhihua Wang
Author_Institution
Univ. of California, San Diego, La Jolla, CA, USA
fYear
2015
fDate
26-28 Jan. 2015
Firstpage
7
Lastpage
10
Abstract
This paper demonstrates a dual path LC voltage controlled oscillator (VCO) that achieves ~65% tuning range with optimized inductor switching design. Combination of discrete and continuous tuning method reduces the gain ratio between coarse tuning path and fine tuning path which alleviates the noise and coupling issues due to high coarse tuning gain. Optimized inductor switching topology enables wideband continuous tuning from 2.74-5.37GHz. The VCO consumes 6.5 mW power from a 1.2 V supply and exhibits -123.8dBc/Hz at 3MHz offset from a 4.605 GHz carrier showing FOMT of -198.3dBc/Hz. The circuit is fabricated in 130nm CMOS process and occupies an area of 0.6mm2.
Keywords
CMOS integrated circuits; LC circuits; MMIC oscillators; circuit tuning; field effect MMIC; inductors; voltage-controlled oscillators; CMOS; coarse tuning path; continuous tuning method; discrete tuning method; fine tuning path; frequency 2.74 GHz to 5.37 GHz; gain ratio; inductor switching design; mode switching technique; optimized inductor switching topology; power 6.5 mW; size 130 nm; tuning range; voltage 1.2 V; voltage controlled oscillator; wide band dual-path LC VCO design; Capacitors; Inductors; Phase noise; Switches; Tuning; Voltage-controlled oscillators; Wireless communication; Cognitive Radio (CR); Dual-Path VCO; LC-VCO; Software Defined Radio (SDR); phase lock loops (PLL); voltage controlled oscillators (VCOs);
fLanguage
English
Publisher
ieee
Conference_Titel
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on
Conference_Location
San Diego, CA
Type
conf
DOI
10.1109/SIRF.2015.7119857
Filename
7119857
Link To Document