A 122-150 GHz LNA with 30 dB gain and 6.2 dB noise figure in SiGe BiCMOS technology

Author

Ben Yishay, Roee ; Shumaker, Evgeny ; Elad, Danny

Author_Institution

IBM Haifa Res. Lab., Haifa, Israel

fYear

2015

fDate

26-28 Jan. 2015

Firstpage

15

Lastpage

17

Abstract

This paper presents a D-Band Low Noise Amplifier (LNA) for imaging applications designed in an advanced 90 nm SiGe BiCMOS process. The LNA consists of 3 cascode stages and one common-emitter stage and achieves peak gain of 30 dB and 3 dB bandwidth at 122-150 GHz. The measured noise figure is maintained below 7.5 dB over the measurement band with minimum of 6.2 dB at 140 GHz. The amplifier consumes DC power of only 45 mW, and occupies area of 0.11 mm² (without pads), which make it suitable for integration in large scale imaging arrays. To our knowledge, this work demonstrates the highest gain, highest bandwidth and lowest noise figure achieved so far at D-Band in any silicon-based technology.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; bipolar MIMIC; low noise amplifiers; millimetre wave amplifiers; BiCMOS technology; D-band low noise amplifier; LNA; SiGe; frequency 122 GHz to 150 GHz; gain 30 dB; imaging applications; low noise amplifier; noise figure 6.2 dB; power 45 mW; size 90 nm; BiCMOS integrated circuits; Gain; Heterojunction bipolar transistors; Noise figure; Silicon germanium; Transmission line measurements; D-Band; SiGe; low noise amplifier; millimeter wave integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/SIRF.2015.7119860

Filename

7119860