Title :
Improvements in SOI technology for RF switches
Author :
Jaffe, Mark ; Abou-Khalil, Michel ; Botula, Alan ; Ellis-Monaghan, John ; Gambino, Jeffrey ; Gross, Jeff ; Zhong-Xiang He ; Joseph, Alvin ; Phelps, Richard ; Shank, Steven ; Slinkman, James ; Wolf, Randy
Author_Institution :
Microelectron. Div., IBM, Essex-Junction, VT, USA
Abstract :
Over the past few years, CMOS Silicon-oninsulator (SOI) has emerged as the dominant technology for RF switches in RF front end modules for cell phones and WiFi. RF SOI technologies were created from silicon processes originally used for high speed logic applications, but the technology was modified to meet the performance needs of RF switches. The RF SOI technologies have been improved to follow the evolving system requirements for insertion loss, isolation, voltage tolerance, linearity, integration and cost. In this paper, the performance results of the latest generations of RF SOI switch technologies from IBM are reviewed and technology elements that contribute to improved performance are discussed. Future improvements are also discussed.
Keywords :
CMOS integrated circuits; radiofrequency integrated circuits; silicon-on-insulator; switches; CMOS silicon-on-insulator; RF SOI switch technology; RF front end modules; WiFi; cell phones; high speed logic applications; insertion loss; isolation loss; silicon processes; voltage tolerance; Harmonic analysis; Insertion loss; Logic gates; Radio frequency; Silicon-on-insulator; Substrates; Transistors; Front End Module; RF switches; SOI;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on
Conference_Location :
San Diego, CA
DOI :
10.1109/SIRF.2015.7119865