Title :
60GHz highly reliable power amplifier with 13dBm Psat 15% peak PAE in 65nm CMOS technology
Author :
Moret, Boris ; Deltimple, Nathalie ; Kerherve, Eric ; Larie, Aurelien ; Martineau, Baudouin ; Belot, Didier
Author_Institution :
Univ. of Bordeaux, Talence, France
Abstract :
A 60 GHz highly reliable single-ended two-stage Power Amplifier (PA) is fabricated for the Wireless Personal Area Network (WPAN) applications. The PA consists of a cascode power stage to reduce voltage drop and improving long-term reliability, and a common source driver stage. Output, inter-stage and input impedance matching networks are implemented with distributed elements (microstrip and slow-wave transmission lines). The PA achieves a saturated output power (Psat) of 13dBm and a maximum Power Added Efficiency (PAEmax) of 15% with 13dB gain. It consumes only 84mW and occupies 0.4mm2 of die area.
Keywords :
CMOS integrated circuits; electric potential; impedance matching; microstrip lines; personal area networks; power amplifiers; CMOS technology; PA; WPAN application; cascode power stage; common source driver stage; complementary metal oxide semiconductor; distributed element; frequency 60 GHz; gain 13 dB; highly reliable single-ended two stage power amplifier; impedance matching network; microstrip; peak PAE; power 84 mW; power added efficiency; saturated output power; size 65 nm; slow-wave transmission line; voltage drop reduction; wireless personal area network; CMOS integrated circuits; CMOS technology; Power amplifiers; Power generation; Power transmission lines; Reliability; Transmission line measurements; 60 GHz; 65nm CMOS technology; cascode topology; microstrip lines; millimeter-wave; power amplifier; slow-wave transmission lines;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on
Conference_Location :
San Diego, CA
DOI :
10.1109/SIRF.2015.7119874
