DocumentCode :
711587
Title :
Gold nanorod array structured silicon nitride films for reliable RF MEMS capacitive switches
Author :
Michalas, L. ; Xavier, S. ; Koutsoureli, M. ; El Jouaidis, O. ; Bansropun, S. ; Papaioannou, G. ; Ziaei, A.
Author_Institution :
Univ. of Athens, Athens, Greece
fYear :
2015
fDate :
26-28 Jan. 2015
Firstpage :
89
Lastpage :
91
Abstract :
The electrical properties of gold rods nanostructured silicon nitride are investigated. The paper aims to determine the advantages of the nanostructured material over conventional dielectrics that will mitigate the dielectric charging and provide a potential candidate for insulating films in MEMS capacitive switches. Different nanorod diameters and densities were grown. A model was implemented to describe both the DC and low frequency electrical properties. Finally, the device performance up to 40GHz was assessed.
Keywords :
dielectric materials; gold; insulating materials; microswitches; nanorods; silicon compounds; Au; MEMS capacitive switch reliability; SiN; dielectric charging mitigation; electrical property; gold nanorod array; insulating film; microelectromechanical system; nanostructured material; nanostructured silicon nitride film; Capacitance; Dielectric films; Dielectrics; Gold; Micromechanical devices; Radio frequency; Reliability; Dielectric charging; Gold nanorods; Nanostructured dielectrics; RF MEMS; Reliability; Silicon nitride;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2015 IEEE 15th Topical Meeting on
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/SIRF.2015.7119884
Filename :
7119884
Link To Document :
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