Title :
Ku-band GaAs MMIC high power amplifier with high efficiency and broadband
Author :
Inkwon Ju ; Hong-gu Ji ; In-Bok Yom
Author_Institution :
Satellite & Wireless Convergence Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon, South Korea
Abstract :
In this paper, we present the GaAs PHEMT monolithic microwave integrated circuit (MMIC) high-power amplifier (HPA) with high efficiency and broadband. The HPA delivers 36 ~ 37dBm (4~5W) saturated output power with 28 ~ 31% power added efficiency (PAE) in the frequency band of 12 to 16 GHz, while providing 26~31 dB of small-signal gain and more than 42 dBm of output third-order intercept point (OIP3). This three-stage amplifier with chip size of 9.4mm2(4mm × 2.35mm) is designed to fully match 50-Ω input and output impedance.
Keywords :
III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; microwave power amplifiers; GaAs; GaAs PHEMT monolithic microwave integrated circuit; Ku-band GaAs MMIC high power amplifier; MMIC HPA; OIP3; PAE; bandwidth 12 GHz to 16 GHz; output third-order intercept point; power added efficiency; size 9.4 mm; Gain; Gallium arsenide; MMICs; PHEMTs; Power amplifiers; Power generation; Power measurement; GaAs pHEMT; high-power amplifer (HPA); monolithic microwave integrated circuit (MMIC) power amplifier;
Conference_Titel :
Microwave Techniques (COMITE), 2015 Conference on
Conference_Location :
Pardubice
Print_ISBN :
978-1-4799-8121-2
DOI :
10.1109/COMITE.2015.7120324
