Modeling of extrinsic parasitic elements of Si based GaN HEMTs using two step de-embedding structures

Author

Essaadali, Riadh ; Kouki, Ammar ; Jarndal, Anwar ; Ghannouchi, Fadhel M.

Author_Institution

Electr. Eng. Dept., Ecole de Technol. Super., Montréal, QC, Canada

fYear

2015

fDate

13-15 April 2015

Firstpage

1

Lastpage

4

Abstract

A new parasitic elements extraction technique for GaN HEMT transistors on Si substrate is presented. This technique is based on the use of two de-embedding GaN structures: open and thru-short. The equivalent circuit models along with the extraction procedure are detailed. A very good agreement between measurements and simulations validate the developed extraction method.

Keywords

III-V semiconductors; elemental semiconductors; gallium compounds; high electron mobility transistors; semiconductor device models; silicon; wide band gap semiconductors; GaN; Si; equivalent circuit model; extraction procedure; extrinsic parasitic element modelling; parasitic element extraction technique; silicon substrate; silicon-based gallium nitride HEMT; two-step de-embedding structures; Biological system modeling; Gallium nitride; HEMTs; Integrated circuit modeling; Microwave FET integrated circuits; Semiconductor device modeling; Silicon; GaN; HEMT; Open and Thru-short structures; Si substrate; Two-step de-embedding;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual

Conference_Location

Cocoa Beach, FL

Type

conf

DOI

10.1109/WAMICON.2015.7120399

Filename

7120399