Title :
High efficiency quadrature HBT power amplifier optimized for use with digital predistortion
Author :
Ledezma, Luis M. ; Vysyaraju, Rajah V.
Author_Institution :
Qorvo - Infrastruct. & Defense Products, Richardson, TX, USA
Abstract :
We demonstrate a 28dBm high efficiency quadrature power amplifier for use with LTE signals and digital predistortion (DPD). The PA is fabricated in an InGaP heterojunction bipolar transistor (HBT) process. It achieves an efficiency of 28% at an average output power of 28dBm with a 5V power supply. To the best of the authors knowledge this is the highest efficiency reported for a non-Doherty multi-stage power amplifier when operated at 8dB power back-off from Psat.
Keywords :
Long Term Evolution; heterojunction bipolar transistors; indium compounds; power amplifiers; DPD; LTE signals; digital predistortion; efficiency 28 percent; heterojunction bipolar transistor process; high-efficiency quadrature HBT power amplifier; nonDoherty multistage power amplifier; power supply; voltage 5 V; CMOS integrated circuits; CMOS technology; Gallium arsenide; Gallium nitride; Sun; Bias networks; digital predistortion (DPD); heterojunction bipolar transistor (HBT); long-term evolution (LTE); nonlinear distortion; power amplifiers (PA);
Conference_Titel :
Wireless and Microwave Technology Conference (WAMICON), 2015 IEEE 16th Annual
Conference_Location :
Cocoa Beach, FL
DOI :
10.1109/WAMICON.2015.7120414
