DocumentCode :
712437
Title :
50GHz Ge waveguide electro-absorption modulator integrated in a 220nm SOI photonics platform
Author :
Gupta, S. ; Srinivasan, S.A. ; Pantouvaki, M. ; Chen, H. ; Verheyen, P. ; Lepage, G. ; Van Thourhout, D. ; Roelkens, G. ; Saraswat, K. ; Absil, P. ; Van Campenhout, J.
Author_Institution :
Imec, Leuven, Belgium
fYear :
2015
fDate :
22-26 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
We report waveguide-integrated Ge electro-absorption modulators operating at 1615nm wavelength with 3dB bandwidth beyond 50GHz and a capacitance of 10fF. A 2V voltage swing enables 4.6dB DC extinction ratio for 4.1dB insertion loss.
Keywords :
capacitance; electro-optical modulation; elemental semiconductors; germanium; integrated optics; integrated optoelectronics; optical losses; optical waveguides; silicon-on-insulator; DC extinction ratio; Ge waveguide integrated electro-absorption modulator; SOI photonics platform; Si; capacitance; capacitance 10 fF; frequency 50 GHz; insertion loss; loss 4.1 dB; size 220 nm; voltage 2 V; voltage swing; wavelength 1615 nm; Absorption; Decision support systems; Electric fields; Extinction ratio; Insertion loss; Modulation; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
Type :
conf
Filename :
7121788
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=712437
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