• DocumentCode
    712440
  • Title

    SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe

  • Author

    Younghyun Kim ; Fujikata, Junichi ; Takahashi, Shigeki ; Takenaka, Mitsuru ; Takagi, Shinichi

  • Author_Institution
    Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
  • fYear
    2015
  • fDate
    22-26 March 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We demonstrate strained SiGe-based carrier-injection MZ optical modulator with low driving current of 1.47 mA owing to the enhanced plasma dispersion effect in SiGe. The 10 Gbps modulation with clear eye opening is also obtained.
  • Keywords
    Ge-Si alloys; optical modulation; semiconductor materials; solid-state plasma; SiGe; bit rate 10 Gbit/s; carrier-injection Mach-Zehnder modulator; clear eye opening; current 1.47 mA; enhanced plasma dispersion effect; low driving current; strained SiGe; Dispersion; Optical attenuators; Optical modulation; Plasmas; Silicon; Silicon germanium;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communications Conference and Exhibition (OFC), 2015
  • Conference_Location
    Los Angeles, CA
  • Type

    conf

  • Filename
    7121791
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=712440