DocumentCode :
712440
Title :
SiGe-based carrier-injection Mach-Zehnder modulator with enhanced plasma dispersion effect in strained SiGe
Author :
Younghyun Kim ; Fujikata, Junichi ; Takahashi, Shigeki ; Takenaka, Mitsuru ; Takagi, Shinichi
Author_Institution :
Dept. of Electr. Eng. & Inf. Syst., Univ. of Tokyo, Tokyo, Japan
fYear :
2015
fDate :
22-26 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
We demonstrate strained SiGe-based carrier-injection MZ optical modulator with low driving current of 1.47 mA owing to the enhanced plasma dispersion effect in SiGe. The 10 Gbps modulation with clear eye opening is also obtained.
Keywords :
Ge-Si alloys; optical modulation; semiconductor materials; solid-state plasma; SiGe; bit rate 10 Gbit/s; carrier-injection Mach-Zehnder modulator; clear eye opening; current 1.47 mA; enhanced plasma dispersion effect; low driving current; strained SiGe; Dispersion; Optical attenuators; Optical modulation; Plasmas; Silicon; Silicon germanium;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
Type :
conf
Filename :
7121791
Link To Document :
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