DocumentCode
712450
Title
High temperature operation of an integrated erbium-doped DBR laser on an ultra-low-loss Si3 N4 platform
Author
Belt, Michael ; Blumenthal, Daniel J.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
fYear
2015
fDate
22-26 March 2015
Firstpage
1
Lastpage
3
Abstract
We demonstrate record high temperature operation, 400 °C, of an integrated Al2O3:Er3+ DBR laser on an ultra-low-loss Si3N4 waveguide platform. Additionally, the device exhibits an uncompensated temperature dependent wavelength shift of 1.92 GHz/°C and maintains over 1.5 mW of output power throughout the entire temperature range.
Keywords
aluminium compounds; distributed Bragg reflector lasers; erbium; integrated optics; optical losses; silicon compounds; solid lasers; thermo-optical devices; thermo-optical effects; waveguide lasers; Al2O3:Er; Si3N4; distributed Bragg reflector; high temperature operation; integrated erbium-doped DBR laser; output power; power 1.5 mW; temperature 400 degC; ultralow loss waveguide; uncompensated temperature dependent wavelength shift; Canning; Distributed Bragg reflectors; Optical reflection; Quantum dot lasers; Silicon; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location
Los Angeles, CA
Type
conf
Filename
7121803
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