DocumentCode :
712450
Title :
High temperature operation of an integrated erbium-doped DBR laser on an ultra-low-loss Si3N4 platform
Author :
Belt, Michael ; Blumenthal, Daniel J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of California, Santa Barbara, Santa Barbara, CA, USA
fYear :
2015
fDate :
22-26 March 2015
Firstpage :
1
Lastpage :
3
Abstract :
We demonstrate record high temperature operation, 400 °C, of an integrated Al2O3:Er3+ DBR laser on an ultra-low-loss Si3N4 waveguide platform. Additionally, the device exhibits an uncompensated temperature dependent wavelength shift of 1.92 GHz/°C and maintains over 1.5 mW of output power throughout the entire temperature range.
Keywords :
aluminium compounds; distributed Bragg reflector lasers; erbium; integrated optics; optical losses; silicon compounds; solid lasers; thermo-optical devices; thermo-optical effects; waveguide lasers; Al2O3:Er; Si3N4; distributed Bragg reflector; high temperature operation; integrated erbium-doped DBR laser; output power; power 1.5 mW; temperature 400 degC; ultralow loss waveguide; uncompensated temperature dependent wavelength shift; Canning; Distributed Bragg reflectors; Optical reflection; Quantum dot lasers; Silicon; Substrates; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
Type :
conf
Filename :
7121803
Link To Document :
بازگشت