Title :
25.8Gbps Direct Modulation AlGaInAs DFB lasers of low power consumption and wide temperature range operation for data center
Author :
Nakamura, N. ; Shimada, M. ; Sakaino, G. ; Nagira, T. ; Yamaguchi, H. ; Okunuki, Y. ; Sugitatsu, A. ; Takemi, M.
Author_Institution :
High Freq. & Opt. Device Works, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
25.8Gbps Direct Modulation AlGaInAs DFB lasers were demonstrated for lower consumption in a wide temperature range. The DFB lasers achieved excellent eye opening from -20°C to 85°C at low current less than 56.5mA.
Keywords :
III-V semiconductors; aluminium compounds; computer centres; distributed feedback lasers; gallium arsenide; indium compounds; laser beams; power consumption; semiconductor lasers; AlGaInAs; bit rate 25.8 Gbit/s; data center; direct modulation DFB lasers; low current; low power consumption; temperature -20 degC to 85 degC; wide temperature range operation; Indium phosphide; Modulation; Power generation; Power lasers; Substrates; Temperature distribution;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
