Title :
Mid-infrared photonics
Author_Institution :
Eng. Program, Univ. of Massachusetts at Boston, Boston, MA, USA
Abstract :
Group IV and III-V semiconductor photonic devices are prime candidates for photonic and opto-electronic (OEIC) applications in the 1.8 to 5.0 μm infrared wavelength range. Si-based active photonics in the GeSn/SiGeSn heterosystem (LDs, PDs, LEDs, amplifiers, EOMs) offers the Si CMOS “foundry advantage” for high-volume low-cost OEIC manufacture. Two MIR applications stand out: (1) deployment of GeSn SOI-based OEICs in a new “supplemental” global fiber-optic network at ~ 2 um wavelengths; (2) creation/deployment of GeSn-related photonic chem-bio-physical sensor OEICs (as well as night-vision-imaging chips) in hand-held tablets and smart phones. The new smart sensors will be part of a local or global network-of-sensors utilizing the “internet of things”.
Keywords :
elemental semiconductors; integrated optoelectronics; optoelectronic devices; silicon; CMOS; EOM; GeSn-SiGeSn; III-V semiconductor; IV semiconductor; LD; LED; PD; SOI-; Si; active photonics; amplifiers; fiber-optic network; foundry; hand-held tablets; heterosystem; internet of things; mid-infrared photonics; night-vision-imaging chips; opto-electronic applications; photonic applications; photonic chem-bio-physical sensor; photonic devices; smart phones; smart sensors; wavelength 1.8 mum to 5.0 mum; Decision support systems; Global Positioning System; Internet; Optical fiber sensors; Optoelectronic and photonic sensors; Photonics;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
