Title :
Ultra-low loss CMOS compatible multi-layer Si3N4-on-SOI platform for 1310nm wavelength
Author :
Ying Huang ; Xiaoguang Tu ; Lim, Andy Eu-Jin ; Junfeng Song ; Tsung-Yang Liow ; Guo-Qiang Lo
Author_Institution :
Inst. of Microelectron., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore
Abstract :
We demonstrated the applications of our Si3N4-on-SOI platform for O-band operation with propagation and interlayer transition loss of ~0.24dB/cm and ~0.2dB, respectively. We also characterized our SOI-based Ge photo-detector and silicon modulator at λ= 1310nm.
Keywords :
CMOS integrated circuits; elemental semiconductors; germanium; integrated optoelectronics; optical losses; optical modulation; photodetectors; silicon; silicon compounds; silicon-on-insulator; Ge; O-band operation; SOI-based Ge photo-detector; Si; Si3N4-Si; interlayer transition loss; propagation; silicon modulator; ultra-low loss CMOS compatible multilayer Si3N4-on-SOI platform; wavelength 1310 nm; Broadband communication; Decision support systems; Extinction ratio; Microelectronics; Optimized production technology; Roads; Silicon;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
