Title :
AlGaAs-on-insulator nanowire with 750 nm FWM bandwidth, −9 dB CW conversion efficiency, and ultrafast operation enabling record Tbaud wavelength conversion
Author :
Pu, M. ; Hu, H. ; Ottaviano, L. ; Semenova, E. ; Vukovic, D. ; Oxenlowe, L.K. ; Yvind, K.
Author_Institution :
Dept. of Photonics Eng., Tech. Univ. of Denmark, Lyngby, Denmark
Abstract :
We present an AlGaAs-on-insulator platform for integrated nonlinear photonics. We demonstrate the highest reported conversion efficiency/length/pump-power, ultra-broadband four-wave mixing, and first-ever wavelength conversion of 1.28-Tbaud serial data signals in a 3-mm long dispersion-engineered AlGaAs nano-waveguide.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; multiwave mixing; nanophotonics; nanowires; optical communication equipment; optical waveguides; optical wavelength conversion; semiconductor-insulator boundaries; AlGaAs; AlGaAs-on-insulator nanowire; CW conversion Efficiency; FWM bandwidth; Tbaud wavelength conversion; integrated nonlinear photonic; nanowaveguide; ultra broadband four-wave mixing; Adaptive optics; Bandwidth; Differential phase shift keying; Nonlinear optics; Optical waveguides; Optical wavelength conversion; Wavelength measurement;
Conference_Titel :
Optical Fiber Communications Conference and Exhibition (OFC), 2015
Conference_Location :
Los Angeles, CA
