Title :
[Copyright notice]
Author :
Sandow, C. ; Baburske, R. ; van Treek, V. ; Niedernostheide, F.-J. ; Felsl, H.-P. ; Cotorogea, M.
Author_Institution :
Infineon Technologies AG, Neubiberg, Germany
Abstract :
The following topics are dealt with: high voltage devices; wide bandgap devices; GaN; integrated power devices; low voltage devices; packaging; and SiC.
Keywords :
electronics packaging; gallium compounds; high-voltage techniques; low-power electronics; power integrated circuits; silicon compounds; wide band gap semiconductors; GaN; SiC; high voltage device; integrated power device; low voltage device; packaging; wide bandgap device;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123374
