Title :
On the impact of carbon-doping on the dynamic Ron and off-state leakage current of 650V GaN power devices
Author :
Moens, P. ; Vanmeerbeek, P. ; Banerjee, A. ; Guo, J. ; Liu, C. ; Coppens, P. ; Salih, A. ; Tack, M. ; Caesar, M. ; Uren, M.J. ; Kuball, M. ; Meneghini, M. ; Meneghesso, G. ; Zanoni, E.
Author_Institution :
ON Semicond., Oudenaarde, Belgium
Abstract :
A strong positive correlation between dynamic Ron and the ionization of buffer traps by injection of electrons from the Si substrate is presented. By exploring different Carbon doping profiles in the epi layers, the substrate buffer leakage is substantially reduced, which in turns results in lower dynamic Ron. The traps in the epi structure are characterized by different electrical techniques such as drain current transient, on-the-fly trapping and ramped back-gating experiments.
Keywords :
III-V semiconductors; carbon; gallium compounds; power HEMT; power semiconductor devices; semiconductor doping; wide band gap semiconductors; GaN; buffer traps; carbon-doping; drain current transient; electrical techniques; electrons; leakage current; on-the-fly trapping; power devices; ramped back-gating; voltage 650 V; Aluminum gallium nitride; Charge carrier processes; Gallium nitride; HEMTs; Leakage currents; Silicon compounds; Substrates; AlGaN/GaN; Carbon; Dynamic Ron; HEMT; offstate leakage;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123383
