A RESURF P-N bimodal LDMOS suitable for high voltage power switching applications

Author

Yongxi Zhang ; Pendharkar, Sameer ; Hower, Phil ; Giombanco, Salvatore ; Amoroso, Antonio ; Marino, Filippo

Author_Institution

Analog Technol. Dev., Texas Instrum., Dallas, TX, USA

fYear

2015

fDate

10-14 May 2015

Firstpage

61

Lastpage

64

Abstract

A novel, high voltage, dual-gate lateral double diffusion MOSFET (LDMOS) with both p-type and n-type conduction is experimentally demonstrated using reduced surface field (RESURF) Si bulk technology. The p-n bimodal LDMOS can enhance drain saturation current by at least 30% with limited cost penalty compared to traditional n-LDMOS. Detailed analysis on the bimodal conduction LDMOS operation and DC output and temperature characteristics is presented. A simplified driving scheme is proposed to drive the dual-gate, p-n bimodal conduction LDMOS.

Keywords

field effect transistor switches; p-n junctions; RESURF; RESURF p-n bimodal LDMOS; drain saturation current; dual-gate lateral double diffusion MOSFET; high voltage power switching applications; n-type conduction; p-type conduction; reduced surface field; silicon bulk technology; Logic gates; MOSFET; Silicon; Switches; Synchronization; Temperature; LDMOS; RESURF; bimodal conduction; high voltage; power switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on

Conference_Location

Hong Kong

ISSN

1943-653X

Print_ISBN

978-1-4799-6259-4

Type

conf

DOI

10.1109/ISPSD.2015.7123389

Filename

7123389