Title :
95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses
Author :
Haberlen, O. ; Polzl, M. ; Schoiswohl, J. ; Rosch, M. ; Leomant, S. ; Nobauer, G. ; Rieger, W.
Author_Institution :
Infineon Technol. Austria AG, Villach, Austria
Abstract :
A novel 25V silicon trench power MOSFET optimized for fast and high efficient switching with record Ron*Qg and Ron*Qoss figure-of-merits is reported. A dual channel structure with two different gate oxide thicknesses allows reducing the body diode conduction losses by up to 50% and enables 95% DC-DC conversion efficiency.
Keywords :
DC-DC power convertors; power MOSFET; power conversion; DC-DC conversion; body diode conduction losses; dual channel structure; figure-of-merits; trench power MOSFET; voltage 25 V; Gallium nitride; Logic gates; MOSFET; Schottky diodes; Switches; DC-DC conversion; Silicon trench power MOSFET; body diode losses; high efficiency; low forward voltage drop;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123390
