DocumentCode
712845
Title
95% DC-DC conversion efficiency by novel trench power MOSFET with dual channel structure to cut body diode losses
Author
Haberlen, O. ; Polzl, M. ; Schoiswohl, J. ; Rosch, M. ; Leomant, S. ; Nobauer, G. ; Rieger, W.
Author_Institution
Infineon Technol. Austria AG, Villach, Austria
fYear
2015
fDate
10-14 May 2015
Firstpage
65
Lastpage
68
Abstract
A novel 25V silicon trench power MOSFET optimized for fast and high efficient switching with record Ron*Qg and Ron*Qoss figure-of-merits is reported. A dual channel structure with two different gate oxide thicknesses allows reducing the body diode conduction losses by up to 50% and enables 95% DC-DC conversion efficiency.
Keywords
DC-DC power convertors; power MOSFET; power conversion; DC-DC conversion; body diode conduction losses; dual channel structure; figure-of-merits; trench power MOSFET; voltage 25 V; Gallium nitride; Logic gates; MOSFET; Schottky diodes; Switches; DC-DC conversion; Silicon trench power MOSFET; body diode losses; high efficiency; low forward voltage drop;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123390
Filename
7123390
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