DocumentCode
712850
Title
Temperature dependence of single-event burnout for super junction MOSFET
Author
Katoh, Shunsuke ; Shimada, Eiji ; Yoshihira, Takayuki ; Oyama, Akihiro ; Ono, Syotaro ; Ura, Hideyuki ; Ookura, Gentaro ; Saito, Wataru ; Kawaguchi, Yusuke
Author_Institution
Toshiba Corp. Semicond. & Storage Products Co., Nomi, Japan
fYear
2015
fDate
10-14 May 2015
Firstpage
93
Lastpage
96
Abstract
Single-Event Burnout (SEB) is one of the catastrophic failure effects that could cause destruction of a MOSFET. In the present work, we experimentally obtained the dependence of SEB tolerance of Super-junction (SJ) MOSFET on temperature and studied the mechanism of the dependence of SEB failure rate on temperature by simulation.
Keywords
MOSFET; semiconductor device breakdown; catastrophic failure effects; single-event burnout; super junction MOSFET; temperature dependence; Charge carrier processes; Electric fields; Impact ionization; MOSFET; Temperature dependence; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123397
Filename
7123397
Link To Document