Over 1.1 kV breakdown low turn-on voltage GaN-on-Si power diode with MIS-Gated hybrid anode

An AlGaN/GaN lateral power diode on Si substrate with recessed Metal/Al₂O₃/III-Nitride (MIS) Gated hybrid anode (MG-HAD) for improved forward conduction and reverse blocking has been realized. The low turn-on voltage of 0.6 V with good uniformity for the fabricated 189 devices is obtained. In comparison with the conventional device, the forward current at 2 V was increased by 5 times that leading to a 51% reduction in specific ON-resistance (R_{ON, SP}). The incorporation of high-k dielectric in the recessed gate region enabling 2-order lower reverse leakage comparing with the conventional device, leading to a high breakdown voltage over 1.1 kV at leakage current as low as 10 μA/mm in the MG-HAD with anode-to-cathode distance (L_D) of 20 μm. The strong reverse blocking over 600 V was still achieved at 150 °C. The proposed diode is compatible with GaN normally-off MIS high-electron-mobility transistors (MISHEMTs), revealing its great potential for highly efficient GaN-on-Si power ICs.