Title :
A modeling and experimental method for accurate thermal analysis of AlGaN/GaN powerbars
Author :
Sodan, Vice ; Stoffels, Steve ; Oprins, Herman ; Baelmans, Martine ; Decoutere, Stefaan ; De Wolf, Ingrid
Author_Institution :
IMEC, Leuven, Belgium
Abstract :
In this work we present a novel and comprehensive method for thermal characterization of GaN based transistors. By means of two coupled simulations (TCAD and FEM) a detailed insight into the device physics has been provided whereas an experimental method (low-RF drain conductance measurement) is recognized as a simple and accurate method for a full transient analysis of the transistors. The method (modeling and experiments) has been performed on several different GaN based transistors where a good agreement between the simulations and experiments is obtained.
Keywords :
III-V semiconductors; finite element analysis; gallium compounds; high electron mobility transistors; semiconductor device measurement; semiconductor device models; thermal analysis; transient analysis; wide band gap semiconductors; AlGaN-GaN; FEM; GaN based transistors; HEMT; TCAD; coupled simulations; device physics; full transient analysis; high electron mobility transistor; low-RF drain conductance measurement; powerbars; thermal analysis; thermal characterization; Frequency measurement; Gallium nitride; HEMTs; Impedance; Temperature measurement; Thermal analysis; finite element analysis; gallium nitride; high electron mobility transistor (HEMT); power dissipation; self-heating effect (SHE); thermal analysis; thermal impedance;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123468
