DocumentCode
712884
Title
1.7kV high-power IGBT fabrication by bonded-wafer-concept
Author
Matthias, Sven ; Janisch, Wolfgang ; Papadopoulos, Charalampos ; Kopta, Arnost
Author_Institution
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
fYear
2015
fDate
10-14 May 2015
Firstpage
409
Lastpage
412
Abstract
Lower losses and higher performance levels at elevated junction temperatures require fabrication processes enabling full design-flexibility for the IGBT buffer and anode to meet application requirements for the ≤1.7kV voltage-range. Here we present the bonded wafer concept that is enabling high thermal stability and soft and high turn-off capability due to full design flexibility for the critical backside layers.
Keywords
anodes; buffer circuits; insulated gate bipolar transistors; thermal stability; wafer bonding; bonded wafer concept; high turn-off capability; high-power IGBT buffer fabrication; thermal stability; voltage 1.7 kV; Anodes; Fabrication; Insulated gate bipolar transistors; Leakage currents; Performance evaluation; Switches; Temperature measurement; IGBT; anode; bonded wafer; buffer; silicon; thin wafer;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location
Hong Kong
ISSN
1943-653X
Print_ISBN
978-1-4799-6259-4
Type
conf
DOI
10.1109/ISPSD.2015.7123476
Filename
7123476
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