Title :
1.7kV high-power IGBT fabrication by bonded-wafer-concept
Author :
Matthias, Sven ; Janisch, Wolfgang ; Papadopoulos, Charalampos ; Kopta, Arnost
Author_Institution :
Semicond., ABB Switzerland Ltd., Lenzburg, Switzerland
Abstract :
Lower losses and higher performance levels at elevated junction temperatures require fabrication processes enabling full design-flexibility for the IGBT buffer and anode to meet application requirements for the ≤1.7kV voltage-range. Here we present the bonded wafer concept that is enabling high thermal stability and soft and high turn-off capability due to full design flexibility for the critical backside layers.
Keywords :
anodes; buffer circuits; insulated gate bipolar transistors; thermal stability; wafer bonding; bonded wafer concept; high turn-off capability; high-power IGBT buffer fabrication; thermal stability; voltage 1.7 kV; Anodes; Fabrication; Insulated gate bipolar transistors; Leakage currents; Performance evaluation; Switches; Temperature measurement; IGBT; anode; bonded wafer; buffer; silicon; thin wafer;
Conference_Titel :
Power Semiconductor Devices & IC's (ISPSD), 2015 IEEE 27th International Symposium on
Conference_Location :
Hong Kong
Print_ISBN :
978-1-4799-6259-4
DOI :
10.1109/ISPSD.2015.7123476
