Title :
Influence of underlap gate length on analog/RF performance of pocket doped Schottky Barrier MOSFET
Author :
Banchhor, Shashank ; KaleP, Sumit ; Kondekar, N.
Author_Institution :
Electron. & Commun. Eng., PDPM IIITDM, Jabalpur, India
Abstract :
In this paper, we studied and investigated the impact of under lap gate length on the analog and RF performance of pocket doped Schottky Barrier MOSFET. In the presence of a highly doped pocket, major device performance metrics such as drain current, transconductance, cut-off frequency, maximum oscillation frequency and gain bandwidth product have been observed and verified using 2D Silvaco ATLAS simulator. Our results show that for increasing underlap gate length the off state current, parasitic capacitances and ambipolarcurrent is reduced. Moreover, we furthered scribed the influence of underlap architecture for the optimization of the device.
Keywords :
MOSFET; Schottky barriers; optimisation; semiconductor device models; semiconductor doping; 2D Silvaco ATLAS simulator; ambipolar current; analog-RF performance; cut-off frequency; device performance metrics; drain current; gain bandwidth product; oscillation frequency; parasitic capacitances; pocket doped Schottky barrier MOSFET; underlap architecture; underlap gate length; Cutoff frequency; Logic gates; MOSFET; Performance evaluation; Radio frequency; Schottky barriers; Silicides; RF performance; Schottky Barrier; pocket doping; underlap gate length;
Conference_Titel :
Electronics and Communication Systems (ICECS), 2015 2nd International Conference on
Conference_Location :
Coimbatore
Print_ISBN :
978-1-4799-7224-1
DOI :
10.1109/ECS.2015.7124764
