• DocumentCode
    713136
  • Title

    A MEMS structure for acoustic energy harvesting using a DPL type BAW resonator mounted over a SOI substrate

  • Author

    Kumar, Wahengbam Kanan ; Kumar, Abhijeet ; Bindal, Abhay

  • Author_Institution
    ECE Dept., Maharishi Markandeshwar Univ., Ambala, India
  • fYear
    2015
  • fDate
    26-27 Feb. 2015
  • Firstpage
    751
  • Lastpage
    756
  • Abstract
    A new acoustic energy harvesting model from a MEMS based BAW resonator is highlighted in this paper. Here, the resonator is designed by using a dual piezoelectric layer (DPL) which is a combination of two piezoelectric materials that were found effective from among the four piezoelectric materials that were used in our previous research paper, which are PZT-5H and Barium Titanate (BaTiO3). Silicon-On-insulation (SOI) based substrate is used as the support layer for the composite layer instead of the traditional Silicon layer as it reduces the latch-up effect that tends to hampers the electrostatic performance of the device when integrated with CMOS SoC. Eigen frequency analysis, frequency domain analysis, absolute value of admittance vs. frequency plots, terminal current, total power dissipation, series resonance, surface deformation of the resonator and Q-factor are some studies done to determine the effective functionality of the device. All the design and simulation are carried in COMSOL Multiphysics environment.
  • Keywords
    eigenvalues and eigenfunctions; energy harvesting; frequency-domain analysis; micromechanical resonators; piezoelectric materials; silicon-on-insulator; COMSOL multiphysics environment; DPL; DPL type BAW resonator; MEMS based BAW resonator; MEMS structure; PZT-5H; Q-factor; SOI based substrate; SOI substrate; acoustic energy harvesting; barium titanate; device electrostatic performance; dual piezoelectric layer; eigenfrequency analysis; frequency domain analysis; piezoelectric materials; series resonance; silicon-on-insulation based substrate; surface deformation; terminal current; total power dissipation; Admittance; Electrodes; Finite element analysis; Frequency-domain analysis; Resonant frequency; Silicon-on-insulator; Substrates; BAW resonator; Eigen frequency ananlysis; MEMS; Q-factor; Silicon-On-Insulation (SOI); frequency domain analysis; piezoelectrirc layer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronics and Communication Systems (ICECS), 2015 2nd International Conference on
  • Conference_Location
    Coimbatore
  • Print_ISBN
    978-1-4799-7224-1
  • Type

    conf

  • DOI
    10.1109/ECS.2015.7125012
  • Filename
    7125012