Title :
Efficiency comparison between SiC- and Si-based active neutral-point clamped converters
Author :
Nicolas-Apruzzese, J. ; Maset, E. ; Busquets-Monge, S. ; Esteve, V. ; Bordonau, J. ; Calle-Prado, A. ; Jordan, J.
Author_Institution :
Dept. of Electron. Eng., Tech. Univ. of Catalonia, Barcelona, Spain
Abstract :
This paper presents an efficiency comparison between silicon-carbide technology and silicon technology. In order to achieve this, the efficiency of an active neutral-point clamped converter built up with silicon carbide power-devices is compared with the efficiency of an active neutral-point clamped converter built up with silicon power-devices, under a particular operating mode and a particular selection of devices. Firstly, overall losses of both converters are estimated. Then, experimental tests are carried out to measure their overall losses and efficiency. Finally, experimental results are compared with the estimations to support the analysis. The efficiency of the SiC converter is higher in all the switching-frequency range.
Keywords :
active networks; power convertors; power semiconductor devices; silicon compounds; wide band gap semiconductors; Si; SiC; active neutral-point clamped converters; silicon carbide power-devices; silicon-carbide technology; switching-frequency range; Insulated gate bipolar transistors; Loss measurement; MOSFET; Silicon; Silicon carbide; Switches; Switching loss; SiC MOSFET; SiC technology; active neutral-point clamped; efficiency; multilevel conversion; wide band gap;
Conference_Titel :
Industrial Technology (ICIT), 2015 IEEE International Conference on
Conference_Location :
Seville
DOI :
10.1109/ICIT.2015.7125550
