EM and lumped-element model of BiCMOS embedded capacitive RF-MEMS switch

Author

Zhang, W. ; Kaynak, M. ; Wietstruck, M. ; Muhlhaus, V. ; Tillack, B.

Author_Institution

IHP, Frankfurt (Oder), Germany

fYear

2012

fDate

12-14 March 2012

Firstpage

1

Lastpage

4

Abstract

This paper presents the modeling of an integrated capacitive RF-MEMS switch. Both electromagnetic (EM) and RLC lumped-element modeling are investigated. These models are applied to an 80 GHz MEMS switch and they agree well with the measurement results up to 115 GHz. The 80 GHz RF-MEMS switch has been optimized and fabricated in a 0. 25 μm SiGe BiCMOS process. It exhibits an insertion loss of 0.5 dB, an isolation of 25 dB and a return loss of 30 dB. The developed RLC model is very convenient to integrate into process design kit (PDK) for circuit simulations.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; RLC circuits; integrated circuit design; microswitches; millimetre wave integrated circuits; BiCMOS embedded capacitive RF-MEMS switch; EM model; PDK; RLC lumped-element modeling; SiGe; circuit simulation; electromagnetic model; frequency 80 GHz; integrated capacitive RF-MEMS switch; loss 0.5 dB; loss 25 dB; loss 30 dB; process design kit; size 0.25 mum; BiCMOS integrated circuits; Capacitance; Contacts; Insertion loss; Integrated circuit modeling; Resonant frequency; Switches; BiCMOS technology; Capacitive RF-MEMS switch; EM model; PDK; RLC lumped-element model;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference (GeMiC), 2012 The 7th German

Conference_Location

Ilmenau

Print_ISBN

978-1-4577-2096-3

Electronic_ISBN

978-3-9812668-4-9

Type

conf

Filename

7128598