Title :
EM and lumped-element model of BiCMOS embedded capacitive RF-MEMS switch
Author :
Zhang, W. ; Kaynak, M. ; Wietstruck, M. ; Muhlhaus, V. ; Tillack, B.
Author_Institution :
IHP, Frankfurt (Oder), Germany
Abstract :
This paper presents the modeling of an integrated capacitive RF-MEMS switch. Both electromagnetic (EM) and RLC lumped-element modeling are investigated. These models are applied to an 80 GHz MEMS switch and they agree well with the measurement results up to 115 GHz. The 80 GHz RF-MEMS switch has been optimized and fabricated in a 0. 25 μm SiGe BiCMOS process. It exhibits an insertion loss of 0.5 dB, an isolation of 25 dB and a return loss of 30 dB. The developed RLC model is very convenient to integrate into process design kit (PDK) for circuit simulations.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; RLC circuits; integrated circuit design; microswitches; millimetre wave integrated circuits; BiCMOS embedded capacitive RF-MEMS switch; EM model; PDK; RLC lumped-element modeling; SiGe; circuit simulation; electromagnetic model; frequency 80 GHz; integrated capacitive RF-MEMS switch; loss 0.5 dB; loss 25 dB; loss 30 dB; process design kit; size 0.25 mum; BiCMOS integrated circuits; Capacitance; Contacts; Insertion loss; Integrated circuit modeling; Resonant frequency; Switches; BiCMOS technology; Capacitive RF-MEMS switch; EM model; PDK; RLC lumped-element model;
Conference_Titel :
Microwave Conference (GeMiC), 2012 The 7th German
Conference_Location :
Ilmenau
Print_ISBN :
978-1-4577-2096-3
Electronic_ISBN :
978-3-9812668-4-9
