• DocumentCode
    714293
  • Title

    A GaN HEMT N-path filter with +17 dBm jammer tolerance

  • Author

    Thomas, Chris M. ; Larson, Lawrence E.

  • Author_Institution
    MaXentric Technol., La Jolla, CA, USA
  • fYear
    2015
  • fDate
    25-28 Jan. 2015
  • Firstpage
    71
  • Lastpage
    73
  • Abstract
    A GaN HEMT bandpass N-path filter is demonstrated for high jammer tolerance. Measurements from 50 MHz to 300 MHz of a series architecture implemented in hybrid form demonstrate a IP1dB of +10 dBm, IIP3 of +24.6 dBm, and a IP1dB out-of-band jammer tolerance of +17 dBm.
  • Keywords
    HEMT circuits; III-V semiconductors; band-pass filters; gallium compounds; jamming; GaN; GaN HEMT bandpass N-path filter; frequency 50 MHz to 300 MHz; hybrid form; jammer tolerance; Band-pass filters; Filtering theory; Gallium nitride; Insertion loss; Jamming; Optical filters; Power harmonic filters; Bandpass filter; GaN; N-path filtering; SAW-less; passive mixer;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radio and Wireless Symposium (RWS), 2015 IEEE
  • Conference_Location
    San Diego, CA
  • Type

    conf

  • DOI
    10.1109/RWS.2015.7129742
  • Filename
    7129742
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=714293