• DocumentCode
    714833
  • Title

    European gallium nitride capability

  • Author

    Martin, Kevin N.

  • Author_Institution
    Sensors & Countermeasures Dept, Dstl, Salisbury, UK
  • fYear
    2015
  • fDate
    10-15 May 2015
  • Abstract
    Gallium nitride (GaN) provides clear advantages over other technologies such as gallium arsenide (GaAs) for high power solid state radio frequency (RF) applications. However Europe is currently reliant on other countries, in particular the US, for GaN components and systems. This paper summarises recent research into GaN within Europe and the progress towards establishing an independent European supply chain.
  • Keywords
    gallium compounds; semiconductor device manufacture; supply chains; GaN; RF applications; gallium nitride; high power solid state radio frequency; independent European supply chain; Epitaxial growth; Europe; Gallium nitride; HEMTs; Silicon carbide; Substrates; Wide band gap semiconductors; GaN devices; GaN epitaxy; GaN supply chain; gallium nitride; silicon carbide;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Radar Conference (RadarCon), 2015 IEEE
  • Conference_Location
    Arlington, VA
  • Print_ISBN
    978-1-4799-8231-8
  • Type

    conf

  • DOI
    10.1109/RADAR.2015.7131004
  • Filename
    7131004
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=714833