DocumentCode :
71512
Title :
Power bumps and through-silicon-vias placement with optimised power mesh structure for power delivery network in three-dimensional-integrated circuits
Author :
Cheoljon Jang ; Jaehwan Kim ; Byunggyu Ahn ; Jongwha Chong
Author_Institution :
Dept. of Electron. Comput. Eng., Hanyang Univ., Seoul, South Korea
Volume :
7
Issue :
1
fYear :
2013
fDate :
Jan. 2013
Firstpage :
11
Lastpage :
20
Abstract :
Three-dimensional-integrated circuits (3D-ICs) bring new issues for power delivery network design because of larger current density and more complicated power delivery paths compared to 2D-IC. The power delivery network consists of power bumps, through-silicon-vias (TSVs), and power wires. IR-drop at each node varies with the number and position of power bumps and TSVs. These three power resources affect IR-drop of 3D-ICs. In this study, the authors propose power delivery network design methodology to optimise power resources wherease IR-drop constraint is satisfied. The simulation results show that the proposed method minimises the number of power bumps and TSVs compared to the conventional method.
Keywords :
integrated circuit design; three-dimensional integrated circuits; 2D-IC; 3D-IC; IR-drop constraint; TSV; current density; power bumps; power delivery network design methodology; power delivery paths; power mesh structure optimisation; power resources optimisation; power wires; three-dimensional-integrated circuits; through-silicon-vias placement;
fLanguage :
English
Journal_Title :
Computers & Digital Techniques, IET
Publisher :
iet
ISSN :
1751-8601
Type :
jour
DOI :
10.1049/iet-cdt.2012.0047
Filename :
6518043
Link To Document :
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