Design of III-V/silicon hybrid surface-emitting laser with grating structure

Author

Jen-Hung Huang ; Bai-Ci Chen ; Yu-Chang Wu ; Chien-Chung Lin

Author_Institution

Inst. of Imaging & Biomed. Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

3

Abstract

The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 μm and a TiO₂/SiO₂ DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.

Keywords

III-V semiconductors; diffraction gratings; distributed Bragg reflectors; distributed feedback lasers; elemental semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; optical design techniques; organic compounds; quantum well lasers; silicon; surface emitting lasers; BCB layer thickness; DBR; HCG mirror; III-V/silicon hybrid surface-emitting laser design; N-InP layer thickness; TiOs-SiO₂-InP-InGaAsP-InP-Si-SiO-Si; VCSEL; benzocyclobutene; distributed Bragg reflectors; grating structure; high-index-contrast subwavelength gratings; optical gain; quantum wells; threshold gain; vertical cavity surface emitting lasers; Distributed Bragg reflectors; Gratings; Optical device fabrication; Reflectivity; Silicon; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131945

Filename

7131945