Title :
Design of III-V/silicon hybrid surface-emitting laser with grating structure
Author :
Jen-Hung Huang ; Bai-Ci Chen ; Yu-Chang Wu ; Chien-Chung Lin
Author_Institution :
Inst. of Imaging & Biomed. Photonics, Nat. Chiao Tung Univ., Tainan, Taiwan
Abstract :
The VCSEL consisting of the HCG mirror, an active layer with InGaAsP quantum wells having optical gain around 1.31 μm and a TiO2/SiO2 DBR is designed. Small threshold gain can be theoretically gotten by adjusting the thickness of BCB layer and N-InP layer.
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflectors; distributed feedback lasers; elemental semiconductors; gallium arsenide; indium compounds; laser cavity resonators; laser mirrors; optical design techniques; organic compounds; quantum well lasers; silicon; surface emitting lasers; BCB layer thickness; DBR; HCG mirror; III-V/silicon hybrid surface-emitting laser design; N-InP layer thickness; TiOs-SiO2-InP-InGaAsP-InP-Si-SiO-Si; VCSEL; benzocyclobutene; distributed Bragg reflectors; grating structure; high-index-contrast subwavelength gratings; optical gain; quantum wells; threshold gain; vertical cavity surface emitting lasers; Distributed Bragg reflectors; Gratings; Optical device fabrication; Reflectivity; Silicon; Vertical cavity surface emitting lasers;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131945
