Title :
A study of subthreshold behavior of short-channel junctionless cylindrical surrounding-gate MOSFETs from an electrostatic potential viewpoint
Author :
Chunsheng Jiang ; Renrong Liang ; Jing Wang ; Jun Xu
Author_Institution :
Tsinghua Nat. Lab. for Inf. Sci. & Technol., Tsinghua Univ., Beijing, China
Abstract :
An analytical electrostatic potential model for Junctionless Cylindrical Surrounding-Gate (JLCSG) MOSFETs was developed by solving the 2-D Poisson equation based on a method of series expansion similar to Green´s function. Subthreshold behavior was studied in detail by changing different device parameters and bias conditions, including doping concentration, channel thickness, gate length, gate oxide thickness, drain voltage, and gate voltage. The calculated results of the analytical models are consistent with those of a 3-D numerical simulator without any fitting parameters for various device parameters and bias conditions. This analytical model can be used to investigate the operating mechanisms of nanoscale JLCSG MOSFETs and to optimize their device performance.
Keywords :
Green´s function methods; MOSFET; Poisson equation; electrostatics; numerical analysis; semiconductor device models; semiconductor doping; 2D Poisson equation; 3D numerical simulator; Green´s function; channel thickness; doping concentration; drain voltage; electrostatic potential model; gate length; gate oxide thickness; gate voltage; nanoscale JLCSG MOSFET; short-channel junctionless cylindrical surrounding-gate MOSFET; subthreshold behavior; Analytical models; Electric potential; Electrostatics; Logic gates; MOSFET; Mathematical model; Semiconductor device modeling; Green´s function; junctionless cylindrical surrounding-gate MOSFETs; subthreshold behavior;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131955
