Title :
A dual-band CMOS power amplifier at 1.8 GHz and 2.6 GHz for LTE applications
Author :
Guan-Yu Pan ; Jeng-Rern Yang
Author_Institution :
Dept. of Commun. Eng., Yuan Ze Univ. Jhongli City, Jhongli, Taiwan
Abstract :
This paper presents a dual-band power amplifier (PA) for LTE applications at 1.8 GHz and 2.6GHz in TSMC 0.18 μm CMOS technology. The proposed PA consists of a two-stage cascode structure comprising a driver stage and power stage. The driver stage employs a RC feedback and resistive feedback. The feedback technique is used to improve the bandwidth. The power stage employs a diode linearizer help to enhance linearity. The simulation results indicated that the PA exhibited an average power gain of 21 dB, an input return loss (S11) less than -18 dB, the output power is about 24.8/23 dBm, and power added efficiency (PAE) is about 35/33 % at 1.8/2.6 GHz. The power consumption is 211 mW at an operation voltage of 3.3V.
Keywords :
CMOS integrated circuits; Long Term Evolution; UHF power amplifiers; CMOS; LTE; PAE; RC feedback; diode linearizer; driver stage; dual-band power amplifier; frequency 1.8 GHz; frequency 2.6 GHz; gain 21 dB; power 211 mW; power added efficiency; power consumption; power stage; resistive feedback; size 0.18 mum; voltage 3.3 V; CMOS integrated circuits; CMOS technology; Dual band; Gain; Long Term Evolution; Power amplifiers; Power generation; CMOS; LTE; diode linearizer; dual-band; feedback; power amplifier;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131970
