Electrical characteristics of multi-gate P-channel FinFETs with VT implanting energies under temperature stress

Author

Mu-Chun Wang ; Yi-De Lai ; Shao-Syuan Syu ; Wen-Shiang Liao ; Wen-How Lan ; Shea-Jue Wang

Author_Institution

Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

3

Abstract

The drive current under the higher doping energy in threshold voltage (V_T) adjustment shows the higher performance. Simultaneously, this consequence in V_T shift under heating effect also reflects the same trend. The deviation ratios at 20KeV and 15KeV doping energies are about 26% and 28%, respectively. The subthreshold swing (S.S.) at higher doping energy is slightly lower than that at higher one. After temperature stress, the S.S. shift at higher doping energy is somewhat greater than that at the lower one, but the transconductance shift at lower doping energy is greater.

Keywords

MOSFET; electric properties; semiconductor doping; doping energy; drive current; electrical characteristics; multigate p-channel FinFET; subthreshold swing; temperature stress; threshold voltage implanting energy; Doping; FinFETs; Logic gates; Performance evaluation; Rough surfaces; Stress; Surface roughness; Drive current; FinFET; doping energy; heating; threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131979

Filename

7131979