Title :
The integration process of W-plug landing on Cu line in 28nm-node flash memory and beyond
Author :
Yi-Wen Lu ; Wei-Lin Wang ; Pei-Chia Chen ; Chun-Chi Lai ; Hao-Tang Hsu ; Chia-Yu Li ; Chih-Yuan Chen ; Li-Min Young ; Ming-Hsin Yeh ; Hsien-Chang Kuo ; Hung-Ju Chien ; Tzung-Hua Ying
Author_Institution :
Process Technol. Dev. Div., Powerchip Technol. Corp., Hsinchu, Taiwan
Abstract :
The integration process of W-plug landing on Cu line has been investigated systematically step-by-step. The process is divided into four steps, including pre-clean, Ti, TiN, and W depositions. The over-all contact resistance of the structure is successfully reduced by reactive plasma treatment for pre-clean, Ti deposition, adding the cycles of plasma treatment for TiN by metal organic chemical vapor deposition, and increasing the temperature of W deposition.
Keywords :
chemical vapour deposition; copper; flash memories; titanium compounds; tungsten; Cu; TiN; W; W-plug landing; contact resistance; flash memory; metal organic chemical vapor deposition; reactive plasma treatment; size 28 nm; MOCVD; Plasma measurements; Plasma temperature; Temperature measurement; Tin; W-plug; contact resistance; metal organic chemical vapor deposition; reactive plasma treatment;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131983
