Title :
GaN-based LEDs with flower shape ZnO nanorods by SILAR-based and hydrothermal methods
Author :
Nan-Ming Lin ; Shih-Chang Shei ; Shoou-Jinn Chang
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
Abstract :
The authors applied a simple and low-cost successive ionic layer adsorption and reaction (SILAR) and hydrothermal method (Hm) methods to form ZnO nanorods with the flower shape for GaN-based light-emitting diodes (LEDs). With 20 mA current injection, it was found that forward voltages were all 3.4 V when the 20mA output powers were 2.36, 2.69, 3.04, 3.24, and 3.0 mW for LED I, LED II, LED III, LED IV, and LED V, respectively. Furthermore, it was also found that the formation of ZnO nanorods on the top of ITO surface did not degrade the electrical properties.
Keywords :
II-VI semiconductors; III-V semiconductors; gallium compounds; indium compounds; light emitting diodes; nanorods; tin compounds; wide band gap semiconductors; zinc compounds; GaN; Hm methods; ITO surface; InSnO2; LED; SILAR; ZnO; ZnO nanorods; current 20 mA; flower shape nanorods; hydrothermal methods; light-emitting diodes; power 2.36 mW; power 2.69 mW; power 3.0 mW; power 3.04 mW; power 3.24 mW; successive ionic layer adsorption and reaction; voltage 3.4 V; Gallium nitride; II-VI semiconductor materials; Indium tin oxide; Light emitting diodes; Power generation; Rough surfaces; Zinc oxide; LEDs; SILAR; hydrothermal; nanorods;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131991
