• DocumentCode
    715210
  • Title

    All silicon rich silicon carbide based solar cell

  • Author

    Chih-Hsien Cheng ; Gong-Ru Lin

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2015
  • fDate
    4-6 May 2015
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    All silicon rich silicon carbide based photovoltaic solar cells (PVSCs) are demonstrated by using the PECVD. By using the [CH4]/[CH4+SiH4] fluence ratio of 50%, the i-SixC1-x layer exhibits the C/Si composition ratio of 0.503, which contributes to an additional absorbance at visible light region with the highest absorption coefficient of 2×105 cm-1. The open-circuit voltage and short-circuit current of the Si-rich Si0.67C0.33/a-S tandem PVSC are enhanced to 0.82 V and 28.1 mA/cm2 with the conversion efficiency and filling factor to 5.51% and 27%, respectively.
  • Keywords
    elemental semiconductors; plasma CVD; silicon compounds; solar cells; PECVD; PVSC; SiC; open-circuit voltage; photovoltaic solar cells; short-circuit current; silicon rich silicon carbide based solar cell; visible light region; Absorption; Films; Photovoltaic cells; Photovoltaic systems; Silicon; Silicon carbide; Si-rich SixC1−x; single photovoltaic solar cell; tandem photovoltaic solar cell;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2015 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ISNE.2015.7131992
  • Filename
    7131992
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=715210