Title :
Field emission of electrochemical graphene oxide
Author :
Yi-Tsung Chang ; Yun-Jhung Chih ; Bo-Sing Lin ; Chun Hu Chen
Author_Institution :
Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan
Abstract :
Field emission device of graphene oxide (GO) with parallel plate-type structure was successfully produced with highly oriented pyrolytic graphite (HOPG) by electrochemical exfoliation. The material, chemical characteristics and material surface structure were analyzed with Raman spectroscopy, XRD, SEM and XPS as well. The best field emission enhancement factor β is 1878.5, and the turn-on field defined current equals to 1μA, max emission current are 3.73V/μm and 12μA, respectively. GO is a good candidate for field emission device.
Keywords :
Raman spectroscopy; X-ray diffraction; X-ray photoelectron spectra; electrochemical devices; graphene devices; materials testing; plates (structures); pyrolysis; scanning electron microscopy; C; HOPG; Raman spectroscopy; SEM; X-ray diffraction; X-ray photoelectron spectra; XPS; XRD; chemical characteristics; electrochemical exfoliation; electrochemical graphene oxide; field emission device; field emission enhancement factor; highly oriented pyrolytic graphite; material surface structure; max emission current; parallel plate-type structure; scanning electron microscopy; turn-on field defined current; Carbon; Chemicals; Glass; Graphene; Numerical analysis; Sun; X-ray scattering; electrochemical graphene oxide; field emission; highly oriented pyrolytic graphite (HOPG);
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131994
