Field emission of electrochemical graphene oxide

Author

Yi-Tsung Chang ; Yun-Jhung Chih ; Bo-Sing Lin ; Chun Hu Chen

Author_Institution

Dept. of Electr. Eng., Nat. Sun Yat-sen Univ., Kaohsiung, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

4

Abstract

Field emission device of graphene oxide (GO) with parallel plate-type structure was successfully produced with highly oriented pyrolytic graphite (HOPG) by electrochemical exfoliation. The material, chemical characteristics and material surface structure were analyzed with Raman spectroscopy, XRD, SEM and XPS as well. The best field emission enhancement factor β is 1878.5, and the turn-on field defined current equals to 1μA, max emission current are 3.73V/μm and 12μA, respectively. GO is a good candidate for field emission device.

Keywords

Raman spectroscopy; X-ray diffraction; X-ray photoelectron spectra; electrochemical devices; graphene devices; materials testing; plates (structures); pyrolysis; scanning electron microscopy; C; HOPG; Raman spectroscopy; SEM; X-ray diffraction; X-ray photoelectron spectra; XPS; XRD; chemical characteristics; electrochemical exfoliation; electrochemical graphene oxide; field emission device; field emission enhancement factor; highly oriented pyrolytic graphite; material surface structure; max emission current; parallel plate-type structure; scanning electron microscopy; turn-on field defined current; Carbon; Chemicals; Glass; Graphene; Numerical analysis; Sun; X-ray scattering; electrochemical graphene oxide; field emission; highly oriented pyrolytic graphite (HOPG);

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7131994

Filename

7131994