Title :
Study of SiOx-based resistive switching memory (ReRAM) in integrated one diode — One resistor (1D-1R) architecture
Author :
Yao-Feng Chang ; Fowler, Burt ; Fei Zhou ; Lee, Jack C.
Author_Institution :
Microelectron. Res. Center, Univ. of Texas at Austin, Austin, TX, USA
Abstract :
In this work, one diode-one resistor (1D-1R) SiOx-based resistive switching (RS) elements were fabricated using PN Si diode as a selector to eliminate sneak-path issues. Our work and results include: 1) demonstrating sub-μs pulsed programming; 2) rectification ratio > 106 (meeting ITRS roadmap criteria) for integrated 1D-1R cross-bar arrays; 3) multi-bit operation; 4) 106 endurance cycles; and 5) robust read/write disturbance immunity for unselected cells in 16×16 1D-1R arrays.
Keywords :
memory architecture; resistive RAM; silicon compounds; 1D-1R architecture; PN silicon diode; ReRAM; SiOx; one diode-one resistor architecture; read/write disturbance immunity; rectification ratio; resistive switching elements; resistive switching memory; sub-μs pulsed programming; Metals; Optical switches; Optimization; Programming; Semiconductor diodes; Silicon; 1D-1R; ReRAM; SiOx; unipolar;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7131996
