Simulation and demonstration of MOS-structure silicon solar cell using ITO/Al2O3/TiO2 antireflective coating

Author

Zhong-Fu Hou ; Wen-Jeng Ho ; Chien-Wu Yeh ; Ruei-Siang Sue ; Yu-Tang Shen ; Chia-Hua Hu ; Yu-Jie Deng

Author_Institution

Dept. of Electro-Opt. Eng., Nat. Taipei Univ. of Technol., Taipei, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

3

Abstract

Performance enhancement of the p-n junction silicon solar cells with ITO/Al₂O₃/TiO₂ antireflective coating is experimentally demonstrated. The reflectivity of the ITO/Al₂O₃/TiO₂ layer configuration with various thicknesses on Si wafer are simulated and characterized. Optical reflection and external quantum efficiency of the proposed MOS-structure Si solar cells are measured and compared with the changing in oxide-film thickness. An impressive efficiency enhancement of 42.39 % was obtained for the cell consisted of a 50-nm-ITO/5-nm-Al₂O₃/25-nm-TiO₂ antireflection coating, compared to the reference cells.

Keywords

MIS devices; alumina; antireflection coatings; silicon; solar cells; titanium compounds; ITO-Al₂O₃-TiO₂; MOS-structure silicon solar cell; antireflective coating; external quantum efficiency; optical reflection; oxide-film thickness; p-n junction silicon solar cells; silicon wafer; Aluminum oxide; Coatings; Films; Indium tin oxide; Photovoltaic cells; Reflectivity; Silicon; Antireflective coating; external quantum efficiency (EQE); solar cell;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7132011

Filename

7132011