Title :
A 1.25 GHz Q-enhanced filter with image rejection
Author :
Peng Gao ; Wei Cui ; Xiaoyan Gui
Author_Institution :
Beijing Inst. of Technol., Beijing, China
Abstract :
A 1.25 GHz two-stage band-pass filter fabricated in TSMC 90 nm CMOS process is presented. The Q-compensate technique is used for better filtering performance, and a notch circuit is added to achieve the desired image rejection of 40 dB. Measured gain of this filter is 16.3 dB at 1.25 GHz with the pass band width of 20 MHz. The out-of-band suppression at 100 MHz offset and image rejection at 1.1 GHz are 26 dB and 42 dB, respectively. The power consumption is 22mA from a 1.2 V supply.
Keywords :
CMOS integrated circuits; band-pass filters; notch filters; CMOS process; Q-compensate technique; Q-enhanced filter; TSMC; bandwidth 20 MHz; complementary metal oxide semiconductor; current 22 mA; frequency 1.1 GHz; frequency 1.25 GHz; frequency 100 MHz; gain 16.3 dB; image rejection; notch circuit; out-of-band suppression; size 90 nm; two-stage band-pass filter; voltage 1.2 V; Band-pass filters; CMOS integrated circuits; Filtering theory; Gain; Resonant frequency; Resonator filters; CMOS; Q-enhanced; band-pass filter; image rejection;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7132017
