DocumentCode :
715231
Title :
Modelling of a sensor for gas adsorption on P and Ga doped GNRFET
Author :
Shyam Sumukh, S.R. ; Moudgil, Akshay ; Swaminathan, Sundaram
Author_Institution :
Dept. of Electr. & Electron. Eng, BITS Pilani, Dubai, United Arab Emirates
fYear :
2015
fDate :
4-6 May 2015
Firstpage :
1
Lastpage :
4
Abstract :
This paper focuses on the modelling of a Top and Bottom gated Nano -GNRFET for gas sensing using Sentaurus and VASP. The models are doped separately with Phosphorus and Gallium. 32nm fabrication technology is used for modelling the Top Gated and 350nm for Bottom gated GNRFET. Under the influences of gases, doped GNRFET has a considerable change in threshold voltage and IDmax making the proposed models promising candidates for Nano scale sensing of N2O and O2 gas.i
Keywords :
adsorption; field effect transistors; gallium; gas sensors; graphene devices; nanoribbons; nitrogen compounds; oxygen; phosphorus; semiconductor device models; C:Ga; C:P; N2O; O2; Sentaurus; VASP; bottom gated GNRFET; fabrication technology; gas adsorption; sensor; size 350 nm; threshold voltage; top gated GNRFET; Field effect transistors; Gases; Graphene; Logic gates; Mathematical model; Nanoscale devices; Sensors; GNRFET; diffusion; doped GNRFET; gas sensor;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ISNE.2015.7132019
Filename :
7132019
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=715231
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