• DocumentCode
    715231
  • Title

    Modelling of a sensor for gas adsorption on P and Ga doped GNRFET

  • Author

    Shyam Sumukh, S.R. ; Moudgil, Akshay ; Swaminathan, Sundaram

  • Author_Institution
    Dept. of Electr. & Electron. Eng, BITS Pilani, Dubai, United Arab Emirates
  • fYear
    2015
  • fDate
    4-6 May 2015
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This paper focuses on the modelling of a Top and Bottom gated Nano -GNRFET for gas sensing using Sentaurus and VASP. The models are doped separately with Phosphorus and Gallium. 32nm fabrication technology is used for modelling the Top Gated and 350nm for Bottom gated GNRFET. Under the influences of gases, doped GNRFET has a considerable change in threshold voltage and IDmax making the proposed models promising candidates for Nano scale sensing of N2O and O2 gas.i
  • Keywords
    adsorption; field effect transistors; gallium; gas sensors; graphene devices; nanoribbons; nitrogen compounds; oxygen; phosphorus; semiconductor device models; C:Ga; C:P; N2O; O2; Sentaurus; VASP; bottom gated GNRFET; fabrication technology; gas adsorption; sensor; size 350 nm; threshold voltage; top gated GNRFET; Field effect transistors; Gases; Graphene; Logic gates; Mathematical model; Nanoscale devices; Sensors; GNRFET; diffusion; doped GNRFET; gas sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Next-Generation Electronics (ISNE), 2015 International Symposium on
  • Conference_Location
    Taipei
  • Type

    conf

  • DOI
    10.1109/ISNE.2015.7132019
  • Filename
    7132019
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=715231