Low-temperature direct wafer bonding for III-V compound semiconductors to nanometer-scale grating arrays

Author

Bai-Ci Chen ; Yu-Chang Wu ; Jen-Hung Huang ; Hao-Chung Kuo ; Chien-Chung Lin

Author_Institution

Inst. of Photonic Syst., Nat. Chiao-Tung Univ., Tainan, Taiwan

fYear

2015

fDate

4-6 May 2015

Firstpage

1

Lastpage

3

Abstract

In this paper, we designed the grating with different periodicities on silicon. Aluminum or silicon dioxide would be filled in the inter-space of grating. Besides, the surface reflectivity of different structures was measured and the theoretical calculation was performed. By oxygen plasma-enhanced process, we successfully present the results of a low-temperature process for direct bonding of InP epitaxial layers on a silicon wafer.

Keywords

III-V semiconductors; aluminium; epitaxial layers; low-temperature techniques; nanoelectronics; oxygen; plasma deposition; silicon compounds; wafer bonding; Al; III-V compound semiconductors; O₂; SiO₂; aluminum; epitaxial layers; low-temperature direct wafer bonding; low-temperature process; nanometer-scale grating arrays; oxygen plasma-enhanced process; silicon dioxide; silicon wafer; surface reflectivity; Aluminum; Bonding; Gratings; Optical surface waves; Photonics; Reflectivity; Silicon; FDTD simulation; Grating; Surface reflectivity; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Next-Generation Electronics (ISNE), 2015 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/ISNE.2015.7132038

Filename

7132038