Title :
Fast and low-temperature sputtering epitaxy of Si and Ge and its application to optoelectronics
Author :
Wenchang Yeh ; Matsumoto, Motohiro ; Sugihara, Keisuke
Author_Institution :
Interdiscipl. Grad. Sch. of Sci. & Eng., Shimane Univ., Matsue, Japan
Abstract :
Novel Si/SiGex-Ge multi-junction solar cell structure was proposed, and pin junction Ge solar cell was fabricated on Ge substrate by sputter epitaxy for the first time, in which growth temperature was under 360°C and growth rates was ~2 nm/s. Internal quantum efficiency at infrared wavelength was as high as 76%, with an open circuit voltage of 0.15V.
Keywords :
elemental semiconductors; epitaxial growth; p-i-n photodiodes; solar cells; sputtering; germanium substrate; growth rates; growth temperature; infrared wavelength; internal quantum efficiency; low-temperature sputtering epitaxy; open circuit voltage; optoelectronics; photo diode; pin junction germanium solar cell; silicon germanium multijunction solar cell structure; silicon multijunction solar cell structure; temperature 360 degC; voltage 0.15 V; Cathodes; Epitaxial growth; Photovoltaic cells; Silicon; Sputtering; Substrates; Germanium; Photo diode; Solar cell; Sputter epitaxy;
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
DOI :
10.1109/ISNE.2015.7132040
