DocumentCode :
715248
Title :
Synthesis of CuInS2-ZnS quantum dots for different Cu/In ratios by one-pot method and its applications to white light-emitting diodes
Author :
You-Cheng Lin ; Jun-Wei Lai ; Shih-Chang Shei
Author_Institution :
Dept. of Electr. Eng., Nat. Univ. of Tainan, Tainan, Taiwan
fYear :
2015
fDate :
4-6 May 2015
Firstpage :
1
Lastpage :
3
Abstract :
This paper reports one-pot method toward the synthesis of CuInS2/ZnS hybrid nanoparticles. First, CuInS2 quantum dots (QDs) were synthesized in the noncoordinating solvent octadecene using copper chlorine, indium chlorine and dodecanethiol. Copper indium sulfide (CIS) quantum dots (QDs) for different Cu/In molar ratios of 1/1, 1/2, and 1/4 are synthesized. The band gap energy of CIS QDs is observed to be dependent for Cu/In ratio, exhibiting a higher band gap from more Cu-deficient QDs. The emission wavelengths of all CIS QDs belong to a deep red region (710-780 nm) with relatively low quantum yields (QYs) of 3.4-7.8%. Compared to respective original core QDs, the absorption peaks of CIS/ZnS QDs are blue-shifted, and their emission wavelengths move to a higher energy accordingly, showing a quite tunable emission from yellow to red. The effective surface passivation by a ZnS overlayer results in a dramatic increase in QY of CIS/ZnS QDs in the range of 38-48%. Finally, high luminescent CIS/ZnS QDs with high luminescent PL efficiency are used for white light emitting diode.
Keywords :
II-VI semiconductors; copper compounds; energy gap; indium compounds; light emitting diodes; nanofabrication; nanoparticles; passivation; photoluminescence; semiconductor growth; semiconductor quantum dots; spectral line shift; ternary semiconductors; visible spectra; wide band gap semiconductors; zinc compounds; CuInS2-ZnS; band gap energy; blue shift; copper chlorine; copper indium sulfide quantum dots; deep red region; dodecanethiol; emission wavelength; hybrid nanoparticles; indium chlorine; molar ratios; noncoordinating solvent octadecene; one-pot method; photoluminescence efficiency; quantum yields; surface passivation; tunable yellow emission; white light-emitting diodes; Absorption; II-VI semiconductor materials; Light emitting diodes; Photonic band gap; Quantum dots; X-ray scattering; Zinc compounds; CuInS2/ZnS; octadecene; quantum dots (QDs); quantum yields;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Next-Generation Electronics (ISNE), 2015 International Symposium on
Conference_Location :
Taipei
Type :
conf
DOI :
10.1109/ISNE.2015.7132043
Filename :
7132043
Link To Document :
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