Title :
Design and Fabrication of Mixed Electronics-Optics Modulator for Dual-Carrier QPSK Generation
Author :
Kikuchi, Kiyofumi ; Nosaka, Hideyuki ; Yamazaki, Hiroshi ; Nagatani, Munehiko ; Goh, Takashi ; Kurishima, Kenji ; Saida, Takashi
Author_Institution :
NTT Device Innovation Center, NTT Corp., Atsugi, Japan
Abstract :
We discuss in detail the design and fabrication of a mixed electronics-optics (MEO) modulator and related key devices. Our proposed MEO modulator generates dual-carrier quadrature phase-shift keying (QPSK) signals utilizing both analog electrical and optical modulation with a simple optical circuit configuration. The key devices for the MEO modulator include a high-speed electrical-phase modulator and a complex optical modulator. We report the design and fabrication of a high-speed phase modulator IC with 0.5-μm InP HBT technology, and a silica-LiNbO3 integrated optical amplitude and phase modulator. We performed proof-of-concept experiments for the MEO modulator, and confirmed the generation of 26-GHz spacing 14-GBaud dual-carrier QPSK signals.
Keywords :
III-V semiconductors; electro-optical modulation; heterojunction bipolar transistors; indium compounds; integrated optics; integrated optoelectronics; lithium compounds; optical communication equipment; optical design techniques; optical fabrication; phase modulation; quadrature phase shift keying; silicon compounds; InP; InP HBT technology; MEO modulator; SiO2-LiNbO3; analog electrical modulation; complex optical modulator; dual-carrier QPSK generation; dual-carrier quadrature phase-shift keying signals; frequency 26 GHz; high-speed electrical-phase modulator; high-speed phase modulator IC; mixed electronics-optics modulator design; mixed electronics-optics modulator fabrication; optical circuit configuration; optical modulation; silica-LiNbO3 integrated optical amplitude; High-speed optical techniques; Integrated optics; Optical attenuators; Optical device fabrication; Optical modulation; Phase modulation; Analog integrated circuits; heterojunction bipolar transistors; indium phosphide; integrated optoelectronics; multicarrier transmission; optical modulation; optical planar waveguides; phase shift keying (PSK); superchannel;
Journal_Title :
Lightwave Technology, Journal of
DOI :
10.1109/JLT.2015.2435056
