Title :
Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors
Author :
Min Hung Lee ; Wei, Y.-T. ; Liu, C. ; Huang, J.-J. ; Ming Tang ; Yu-Lun Chueh ; Chu, K.-Y. ; Miin-Jang Chen ; Heng-Yuan Lee ; Yu-Sheng Chen ; Li-Heng Lee ; Ming-Jinn Tsai
Author_Institution :
Inst. of Electro-Opt. Sci. & Technol., Nat. Taiwan Normal Univ., Taipei, Taiwan
Abstract :
The corresponding energy landscape and surface potential are deduced from the experimental ferroelectricity of HfZrO2 (HZO) for low-power steep-slope transistor applications. The anti-ferroelectric (AFE) in annealed 600°C HZO extracted electrostatic potential gain from the measured polarization hysteresis loop and calculated subthreshold swing 33 mV/dec over six decades of IDS. A feasible concept of coupling the AFE HZO is experimentally established with the validity of negative capacitance and beneficial for steep-slope FET development in future generation.
Keywords :
MOSFET; antiferroelectric materials; antiferroelectricity; capacitance; dielectric hysteresis; dielectric polarisation; ferroelectric devices; ferroelectric materials; hafnium compounds; low-power electronics; surface potential; HfZrO2; annealed extracted electrostatic potential gain; antiferroelectricity; energy landscape; ferroelectricity; low-power steep-slope transistor applications; negative capacitance; polarization hysteresis loop; steep-slope FET; subthreshold swing; surface potential; temperature 600 degC; Annealing; Capacitance; Dielectrics; Electric potential; Field effect transistors; Iron; Tin; Ferroelectric (FE); ferroelectric; negative capacitance; negative capacitance (NC); subthreshold swing; subthreshold swing (SS);
Journal_Title :
Electron Devices Society, IEEE Journal of the
DOI :
10.1109/JEDS.2015.2435492
