Title :
LSI aging estimation using ring oscillators
Author :
Miura, Yukiya ; Ikeda, Tatsunori
Author_Institution :
Fac. of Syst. Design, Tokyo Metropolitan Univ., Tokyo, Japan
Abstract :
Transistor aging occurs in nanoscale technologies and is one of the factors that degrade the performance of LSIs. This paper presents a method for estimating the amount of increment in the delay time of an LSI and a method for estimating the amount of increment in the threshold voltage per transistor from the changes in the period of two ring oscillators by aging.
Keywords :
ageing; large scale integration; nanotechnology; oscillators; transistors; LSI aging estimation; nanoscale technologies; ring oscillators; transistor aging; Aging; Delays; Estimation; Field effect transistors; Large scale integration; Logic gates; MOS devices; Aging (Degradation); CHC; Delay time; NBTI; PBTI; Ring oscillators;
Conference_Titel :
Test Symposium (ETS), 2015 20th IEEE European
Conference_Location :
Cluj-Napoca
DOI :
10.1109/ETS.2015.7138765
