Title :
Switchable 2-port Aluminum Nitride MEMS resonator using monolithically integrated 3.6 THz cut-off frequency phase-change switches
Author :
Hummel, Gwendolyn ; Rinaldi, Matteo
Author_Institution :
Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA
Abstract :
This work presents the first experimental demonstration of an intrinsically switchable Aluminum Nitride (AlN) 2-port MEMS resonator using 3 monolithically integrated chalcogenide phase change material (PCM) switches.
Keywords :
III-V semiconductors; aluminium compounds; microfabrication; micromechanical resonators; microswitches; monolithic integrated circuits; phase change materials; submillimetre wave integrated circuits; wide band gap semiconductors; AlN; frequency 3.6 THz; monolithically integrated chalcogenide PCM switch; monolithically integrated cut-off frequency phase-change switch; phase change material; switchable 2-port aluminum nitride MEMS resonator; Aluminum nitride; Electrodes; III-V semiconductor materials; Micromechanical devices; Phase change materials; Radio frequency; Switches; aluminum nitride resonators; phase change materials; piezoelectric resonators; reconfigurable resonators;
Conference_Titel :
Frequency Control Symposium & the European Frequency and Time Forum (FCS), 2015 Joint Conference of the IEEE International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4799-8865-5
DOI :
10.1109/FCS.2015.7138939
