DocumentCode :
716223
Title :
A novel input matching topology for improved digital pre-distortion of RF power amplifiers
Author :
Wilson, Richard ; Goel, Saurabh ; Singerl, Peter
Author_Institution :
Infineon RF Power, Morgan Hill, CA, USA
fYear :
2015
fDate :
25-28 Jan. 2015
Firstpage :
1
Lastpage :
4
Abstract :
Signal linearity is becoming an increasingly important requirement for the high power amplifiers used in current wireless communications systems. In this paper we demonstrate an input matching topology to improve the overall linearity performance of the base-station power amplifier. We then show simulation and measurement results using high-power laterally diffused metal oxide semiconductor (LDMOS) RF transistor and digital predistortion system for prototype design.
Keywords :
MOSFET; radiofrequency power amplifiers; LDMOS RF transistor; RF power amplifiers; base-station amplifier; digital predistortion improvement; high power amplifiers; input matching topology; laterally diffused metal oxide semiconductor transistor; prototype design; signal linearity; wireless communications systems; Impedance; Impedance matching; Logic gates; Performance evaluation; Radio frequency; Topology; Transistors; Power Amplifiers; Predisortion;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Power Amplifiers for Wireless and Radio Applications (PAWR), 2015 IEEE Topical Conference on
Conference_Location :
San Diego, CA
Type :
conf
DOI :
10.1109/PAWR.2015.7139193
Filename :
7139193
Link To Document :
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